Two-dimensional (2D) superconducting materials have been identified as a key component in the advancement of miniaturized optoelectronic devices. These devices are expected to perform optimally while consuming minimal energy. To achieve this, higher gate capacitance is required, allowing gates to store more electrical charge in proportion to the voltage applied. One approach to increasing gate capacitance without reducing the thickness of gate insulators involves using insulating materials with a high dielectric constant (κ), such as hafnium oxide (HfO2).

Challenges and Solutions

While high dielectric constant materials like hafnium oxide can be beneficial, they have proven to be challenging to integrate with 2D semiconductors. Researchers at Fudan University recently introduced a 2D perovskite oxide with a high κ that can be effectively integrated with various 2D channel materials. This development, outlined in their paper published in Nature Electronics, presents new opportunities for the downsizing of optoelectronics.

The 2D perovskite oxide Sr2Nb3O10, featured in the researchers’ work, was created using a top-down preparation method. After synthesizing SNO nanosheets, they successfully transferred them onto different 2D materials. Noteworthy is Sr2Nb3O10’s high κ of 24.6 and moderate bandgap, making it suitable as a photoactive high-κ dielectric for phototransistors based on various 2D semiconducting materials like graphene, molybdenum disulfide, tungsten disulfide, and tungsten diselenide.

The researchers tested the performance of transistors integrating Sr2Nb3O10 with channel materials like molybdenum disulfide and tungsten disulfide. The molybdenum disulfide transistors showed an impressive on/off ratio of 106 with a supply voltage of 2V and a subthreshold swing of 88mV dec−1. On the other hand, tungsten disulfide phototransistors showed a photocurrent-to-dark-current ratio of ~106 and UV responsivity of 5.5× 103 A W−1 under visible or UV light illumination.

The initial findings of the researchers highlight the successful integration of Sr2Nb3O10 with various channel materials through a straightforward procedure. The well-defined interface between the semiconductor and dielectric, coupled with the high κ of Sr2Nb3O10, facilitates efficient gate control of channel materials. Additionally, the phototransistors with the photoactive dielectric demonstrate UV-visible dual-band photodetection, distinguishing between UV and visible light illumination at separate terminals. This breakthrough by Li, Liu, and their team sets the foundation for the synthesis of additional 2D perovskite oxides that can be combined with existing semiconductors and channel materials, leading to the development of smaller, high-performing, and energy-efficient electronics or optoelectronics.

The integration of 2D perovskite oxides in optoelectronics showcases exciting possibilities for future advancements in the field. The unique properties and compatibility with various materials make these oxides a valuable asset in the development of next-generation optoelectronic devices.


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